File:Etch depth.jpg
| Uploaded by | Mgerlt |
|---|---|
| Upload date | 2019-12-13T14:19:11Z |
| MIME type | image/jpeg |
| Dimensions | 2903 × 666 px |
| File size | 1.1 MB |
Summary
| Description |
English: Inductively Coupled Plasma - Deep Reactive Ion Etching (ICP-DRIE) of microchannel in silicon with different aspect ratios. Smaller channels are etched with a lower etch rate, since radicals cannot enter with the same efficiency. Therefore, small channels are shallower. |
| Date | |
| Source | Own work |
| Author | Mgerlt |
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